Abstract
This paper demonstrates the dynamic characteristics of 150-V-class GaN
power HBTs for the first time. At OFF-state collector bias
VCEQ = 80 V, the device shows a low dynamic specific
on-resistance (RON,sp) of 0.316
mΩ·cm2, which is only 4.7% higher than static
RON,sp, thanks to current conductive path far from the
surface. A threshold voltage (Vth) of 3.58 V extracted
at 1 A/cm2 is achieved with an on/off current ratio of
2×107. The device also show a large base voltage swing
of -7 to 7 V with a small Vth hysteresis of 50 mV. The
low dynamic resistance degradation, high positive Vth
with low Vth hysteresis, and large base voltage swing
all demonstrate the great potential of GaN HBT in power switching
applications.