Tcad Device Modelling
In order to model the device accurately using TCAD Synopsys, we utilized
the following parameters: an Etched Drain Thickness
(ted) of 5nm, an Oxide thickness (toxi)
of 2nm, a channel length (Lchnl) of 30nm, radii (R) of
7nm, and a gate work function of 4.8 eV (Tungsten diSilicide). The
P++ doped (elevated doped) ESD was set to a
concentration of 1020/cm3, while the
P+ channel was doped at a concentration of
1015/cm3, and the
P+ source at a concentration of
1018/cm3. The N+drain was doped at a concentration of
5x1017/cm3 [1]. The extended
length for the source (Lsxted) and drain
(Ldxted) was set to 40nm. To measure the effect of
IOFF, we employed a non-local BTBT model and a trap
assisted tunneling model, while the Shockley Read Hall (SRH) model was
employed to estimate fixed minority carrier’s lifetime.