The reference values presented in the table for the MOSFET based SRAM power Stability Metrics has been referred from [9]. With reference to these values, Etched drain-based GAA TFET based SRAM Stability Metrics has been compared.

Conclusion

Our study involves the implementation of 6T SRAM using Etched drain based Cylindrical GAA TFET and its analysis. The stability of the SRAM cell was assessed through the utilization of the N-Curve Method, allowing for a comparison of its leakage power with MOSFETs employing different technological variations. Our results indicate that our system has a 68.3% reduction in leakage power dissipation compared to a 16nm MOSFET. Moreover, we achieved improvements in several key parameters such as a 15.58% increase in SVNM, 8.623% increase in SINM, 8.152% increase in WTV, 12.86% increase in WTI, 27.62% increase in SPNM and 19.95% increase in WTP. Overall, our Etched Drain based Cyl. GAA TFET based SRAM cell exhibits superior stability and lower leakage power dissipation.

Acknowledgement

The work was supported by the Teachers Associateship for Research Excellence (TARE), Science and Research Board (SERB), Govt. of India under Grant No. TAR/2022/000406 and VIT Bhopal University.

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