Fig. 4. 6T SRAM cell

Stability Metrics

The objective pertaining to this paper implies to explore the suitability of two methods, namely the SNM metric and N curve method, for evaluating the reliability concerning an Static Random Access Memory cell. Emphasis is placed on the N curve method due to the drawbacks associated with using the SNM metric butterfly curves approach, a restrictive factor constitutes incapability with the intention of automatically measuring the SNM using inline testers, time-consuming mathematical calculations, and imprecise results due to the need to fit squares in each lobe to determine the SNM. Therefore, the N curve method is considered more appropriate as it offers higher accuracy and does not require complex mathematical calculations.

Results

Static Noise Margin
The primary determinant of an SRAM cell’s stability is its capacity to withstand and maintain reliable operation when subjected to high levels of DC noise voltage, which is commonly referred to as the SNM (Static Noise Margin).