Tcad Device Modelling

In order to model the device accurately using TCAD Synopsys, we utilized the following parameters: an Etched Drain Thickness (ted) of 5nm, an Oxide thickness (toxi) of 2nm, a channel length (Lchnl) of 30nm, radii (R) of 7nm, and a gate work function of 4.8 eV (Tungsten diSilicide). The P++ doped (elevated doped) ESD was set to a concentration of 1020/cm3, while the P+ channel was doped at a concentration of 1015/cm3, and the P+ source at a concentration of 1018/cm3. The N+drain was doped at a concentration of 5x1017/cm3 [1]. The extended length for the source (Lsxted) and drain (Ldxted) was set to 40nm. To measure the effect of IOFF, we employed a non-local BTBT model and a trap assisted tunneling model, while the Shockley Read Hall (SRH) model was employed to estimate fixed minority carrier’s lifetime.