The reference values presented in the table for the MOSFET based SRAM
power Stability Metrics has been referred from [9]. With reference
to these values, Etched drain-based GAA TFET based SRAM Stability
Metrics has been compared.
Conclusion
Our study involves the implementation of 6T SRAM using Etched drain
based Cylindrical GAA TFET and its analysis. The stability of the SRAM
cell was assessed through the utilization of the N-Curve Method,
allowing for a comparison of its leakage power with MOSFETs employing
different technological variations. Our results indicate that our system
has a 68.3% reduction in leakage power dissipation compared to a 16nm
MOSFET. Moreover, we achieved improvements in several key parameters
such as a 15.58% increase in SVNM, 8.623% increase in SINM, 8.152%
increase in WTV, 12.86% increase in WTI, 27.62% increase in SPNM and
19.95% increase in WTP. Overall, our Etched Drain based Cyl. GAA TFET
based SRAM cell exhibits superior stability and lower leakage power
dissipation.
Acknowledgement
The work was supported by the Teachers Associateship for Research
Excellence (TARE), Science and Research Board (SERB), Govt. of India
under Grant No. TAR/2022/000406 and VIT Bhopal University.
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