Simple modeling of a novel Multiterminal Nanoscale memtransistor
- Xianyan Kuang,
- xianglan huan,
- Zuliang Zhang,
- Fujun Cheng
Xianyan Kuang
JiangXi University of Science and Technology
Author ProfileZuliang Zhang
JiangXi University of Science and Technology
Author ProfileAbstract
Nanoscale memristors open up new opportunities for the development of
brain neural networks. Simple and precise memristors enhance the
performance of various neural networks and operational circuits. In this
letter, a three-terminal memristor is proposed, which makes the
memristor more flexible and practical in circuit design and application
through the introduction of a control port. Consid-ering that the
resistance of a three-terminal memristor consists of three parts, i.e.,
metal region, low-resistance region, and high-resistance region, a
three-segment piecewiselinear method is applied to fit these three
regions. The model of this memristor is constructed through the
derivation of the memristor formula and working principle. Candence
simulations are conducted on the resultant circuit to verify its
correctness.17 Aug 2023Submitted to Electronics Letters 18 Aug 2023Submission Checks Completed
18 Aug 2023Assigned to Editor
24 Aug 2023Reviewer(s) Assigned
20 Sep 2023Review(s) Completed, Editorial Evaluation Pending
22 Sep 2023Editorial Decision: Revise Major
21 Oct 2023Review(s) Completed, Editorial Evaluation Pending
21 Oct 2023Editorial Decision: Revise Major