Figure 16: Variation of transient response of fractional order MOS based
CO with component resizing (Two fractance devices).
On resizing the value of inductor from 1pH to 100pH, it can be seen from
the transient analysis that the frequency tends to decrease for larger
value of inductor L. The peak voltage value also tends to reduce on
using two fractance devices of different orders compared to one FOC as
in Figure 9. If tap ratio (n=2) is used for C1=C2=0.3n for order, α=0.67
the MOS oscillator oscillates at 1.5GHz as in bode plot representation
of Figure 17. This implies that just by varying the order, number of
fractance in the circuit, the characteristic properties can be changed.