Figure 26: Noise PSD curves for the designed COs (order, α=0.62).
From the noise power spectral density curves it can be observed that the
peak noise is the least for CNTFET based CO. Fractional MOS based CO is
having the highest peak noise value. The peak values of the noise PSD
(in pV/Hz^0.5) for different COs are 1.42, 2, 1 and 1.3 for the
integer order MOS, fractional order MOS, integer order CNTFET and
fractional order CNTFET based COs respectively. The reduced noise in the
CNTFET based COs is attributed to significantly reduced resistance in
CNTs due to intrinsic ballistic transport in CNTs.